Research Article
Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells
Table 1
Comparison with previous works.
| ā | Ref. [2] | Ref. [3] | Ref. [4] | This work |
| L | 32nm | 25nm | 22nm | 14nm |
| Hfin | 40nm | 1um | 1um | 40nm |
| | undoped | 1e16 | 10e15 | 1e12 |
| | 2e20 | N/A | 10e20 | 1e20 |
| TSI | H:6nm L:12nm | H:9nm L:N/A | H:80nm L:80nm | H:6nm L:6nm |
| EOT | L:1nm H:2nm | H:1nm L:N/A | H:2nm L:2nm | H:0.75nm L:0.8nm |
| GWF | H:4.8 L:4.5 | H:4.85 L:N/A | H:5.2 L:4.5 | H:4.9 L:4.55 |
| Gate | Poly | MGHK | MGHK | MGHK |
| Vdd | 0.9V | 0.6V | 1V | 0.6V |
| Id10 | H:1.0e-9A, L:2.0e-5A | H: 4.0e-7A L:N/A | H:2.0e-8A L:1.0e-3A | H:2.0e-9A L: 7.7e-6A |
| Id11 | H:1.0e-5A L:4.0e-5A | H: 1.0e-4A L:N/A | H:1.0e-4A L:2.0e-3A | H:2.4e-6A L:3.2e-5A |
| | H:5.0e-12A L:2.0e-11A | H: 2.0e-13A L:N/A | H:2.0e-15A L:2.0e-9 | H:6.6e-13A L: 1.6e-8A |
| | H: 2.0e+6 L2.0e+6 | H:5.0e+6 L: N/A | H: 5.0e+10 L: 1.0e+6 | H: 3.6e+6 L: 2.0e+3 |
| Opt. Tools | FUDG/TCAD | MEDICI | MEDICI | Sentaurus Device |
|
|
H: high-Vth transitor; L: low-Vth transistor. |