http://www.hindawi.comThe latest articles from Hindawi Publishing Corporation© 2012, Hindawi Publishing Corporation. All rights reserved.http://www.hindawi.com/journals/apec/2012/502465/We have presented an RF MEMS tuneable lowpass filter. Both distributed transmission lines and RF MEMS capacitances were used to replace the lumped elements. The use of RF MEMS capacitances gives the flexibility of tuning the cutoff frequency of the lowpass filter. We have designed a low-pass filter at 9–12 GHz cutoff frequency using the theory of stepped impedance transmission lines. A prototype of the filter has been fabricated using parallel plate capacitances. The variable shunt capacitances are formed by a combination of a number of parallel plate RF MEMS capacitances. The cutoff frequency is tuned from C to X band by actuating different combinations of parallel capacitive bridges. The measurement results agree well with the simulation result.Shimul C. Saha, Ulrik Hanke, Håkon Sagberg, Tor A. Fjeldly, and Trond SætherCopyright © 2012 Shimul C. Saha et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/284767/A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P1 dB at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.R. Malmqvist, C. Samuelsson, A. Gustafsson, P. Rantakari, S. Reyaz, T. Vähä-Heikkilä, A. Rydberg, J. Varis, D. Smith, and R. BaggenCopyright © 2011 R. Malmqvist et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/823654/In recent years, there is a growing demand to have smaller and lighter electronic circuits which have greater complexity, multifunctionality, and reliability. High-density multichip packaging technology has been used in order to meet these requirements. The higher the density scale is, the larger the power dissipation per unit area becomes. Therefore, in the designing process, it has become very important to carry out the thermal analysis. However, the heat transport model in multichip modules is very complex, and its treatment is tedious and time consuming. This paper describes an application of the thermal network method to the transient thermal analysis of multichip modules and proposes a simple model for the thermal analysis of multichip modules as a preliminary thermal design tool. On the basis of the result of transient thermal analysis, the validity of the thermal network method and the simple thermal analysis model is confirmed.Masaru Ishizuka, Tomoyuki Hatakeyama, Yuichi Funawatashi, and katsuhiro KoizumiCopyright © 2011 Masaru Ishizuka et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/546986/The present paper evaluates the static and motional feedthrough capacitance of a silicon carbide-based flexural-mode microelectromechanical system resonator. The static feedthrough capacitance was measured by a network analyzer under atmospheric pressure. The motional feedthrough was obtained by introducing various values into the modeling circuit in order to fit the Bode plots measured under reduced pressure. The static feedthrough capacitance was 0.02 pF, whereas the motional feedthrough capacitance of an identical device was about 0.2 pF, which is one order of magnitude larger than the static feedthrough capacitance.Wen-Teng ChangCopyright © 2011 Wen-Teng Chang. All rights reserved.http://www.hindawi.com/journals/apec/2011/320367/Two new quadrature oscillator circuits using operational amplifiers are presented. Outputs of two sinusoidal signals with 90° phase difference are available in each circuit configuration. Both proposed quadrature oscillators are based on third-order characteristic equations. The oscillation conditions and oscillation frequencies of the proposed quadrature oscillators are orthogonally controllable. The circuits are implemented using the widely available operational amplifiers which results in low output impedance and high current drive capability. Experimental results are included.Jiun-Wei HorngCopyright © 2011 Jiun-Wei Horng. All rights reserved.http://www.hindawi.com/journals/apec/2011/871474/An ultra-wideband pulse generator was designed and fabricated in GaAs HBT IC technology. The generator includes delay and differential circuits to convert a TTL input into a Gaussian pulse signal as well as a Class-C amplifier to boost the pulse amplitude while compressing the pulse width. By adjusting the collector bias of the Class-C amplifier, the pulse amplitude can be varied linearly between 3.5 V and 11.5 V while maintaining the pulse width at 0.3 ± 0.1 nanosecond. Alternatively, by adjusting the base bias of the Class-C amplifier, the pulse width can be varied linearly between 0.25 ns and 0.65 ns while maintaining the pulse amplitude at 10 ± 1 V. Finally, the amplified Gaussian signal can be shaped into a monocycle signal by an L-C derivative circuit. The present pulse generator compares favorably with pulse generators fabricated in CMOS ICs, step-recovery diodes, or other discrete devices.Renfeng Jin, Subrata Halder, Walter R. Curtice, James C. M. Hwang, and Choi L. LawCopyright © 2011 Renfeng Jin et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/708361/The present paper deals with the design and the realization of a new thermoelectric sensor (Seebeck), sensitive to the infrared radiations emitted by different sources. The function mechanism utilizes radiative absorption phenomena, heat transfer, and thermoelectric effects. The sensor includes two printed circuits, the first is a planar thermoelectric circuit constituted of many plated differential thermocouples, and the second is constituted of a resistive constantan track and placed at the top of the first circuit so that the constantan track is placed on the top of the even thermocouple junctions. The constantan track, covered with a resin of great absorptivity, collects the infra-red radiations and generates temperature gradients between the junction points of the first circuit. Then the resulting temperature differences between the junction points are directly converted into a proportional Seebeck voltage. As an application, the sensor is adapted in order to realize a device for detecting infrared radiations, and the results are very encouraging.Mohammed Rahmoun, Khalid Hachami, Abdelwahad Touil, Benaissa Bellach, Mohammed Bailich, and Ammar MerdaniCopyright © 2011 Mohammed Rahmoun et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/274394/This paper reports two new circuit topologies using second-generation current conveyors (CCIIs) for realizing variable frequency sinusoidal oscillators with minimum passive components. The proposed topologies in this paper provide new realizations of resistance-controlled and capacitor-controlled variable frequency oscillators (VFOs) using only four passive components. The first topology employs three CCIIs, while the second topology employs two CCIIs. The second topology provides an advantageous feature of frequency tuning through two grounded elements. Application of the proposed circuits as a wide-frequency range digitally controlled sinusoid generator is exhibited wherein the digital frequency control has been enabled by replacing both the capacitors by two identical variable binary capacitor banks tunable by means of the same binary code. SPICE simulations of the CMOS implementation of the oscillators using 0.35 μm TSMC CMOS technology parameters and bipolar implementation of the oscillators using process parameters for NR200N-2X (NPN) and PR200N-2X (PNP) of bipolar arrays ALA400-CBIC-R have validated their workability. One of the oscillators (with CMOS implementation) is exemplified as a digitally controlled sinusoid generator with frequency generation from 25 kHz to 6.36 MHz, achieved by switching capacitors and with power consumption of 7 mW in the entire operating frequency range.Abhirup LahiriCopyright © 2011 Abhirup Lahiri. All rights reserved.http://www.hindawi.com/journals/apec/2011/391642/The paper presents a new current mode biquadratic filter with one input and three outputs using differential voltage current conveyor (DVCC) and four passive components. The proposed circuit can simultaneously realize low-pass, band-pass, and high-pass filter functions without changing the circuit topology and passive elements. The circuit exhibits a good frequency performance and low-sensitivity figures. PSPICE simulation using 0.5 μm CMOS parameters are given to validate the proposed circuit. The circuit provides a simple yet novel solution to the current-mode filtering after appropriate incorporation of current sensing elements in form of current buffers.Bhartendu Chaturvedi and Sudhanshu MaheshwariCopyright © 2011 Bhartendu Chaturvedi and Sudhanshu Maheshwari. All rights reserved.http://www.hindawi.com/journals/apec/2011/313580/A generic design (GD) for realizing an nth order log-domain multifunction filter (MFF), which can yield four possible stable filter configurations, each offering simultaneously lowpass (LP), highpass (HP), and bandpass (BP) frequency responses, is presented. The features of these filters are very simple, consisting of merely a few exponential transconductor cells and capacitors; all grounded elements, capable of absorbing the shunt parasitic capacitances, responses are electronically tuneable, and suitable for monolithic integration. Furthermore, being designed using log-domain technique, it offers all its advantages. As an example, 5th-order MFFs are designed in each case and their performances are evaluated through simulation. Lastly, a comparative study of the MFFs is also carried, which helps in selecting better high-order MFF for a given application.N. A. Shah and F. A. KhandayCopyright © 2011 N. A. Shah and F. A. Khanday. All rights reserved.http://www.hindawi.com/journals/apec/2011/586924/This paper reports on the integration of an optical protein with single electron transistors to form a nano-bio-hybrid device for sensing. Bacteriorhodopsin (bR) is an optoelectric protein that translocates a proton across a distance of several nanometers in response to an absorbed photon of incident light. This charge gradient results in a measurable voltage in the dried state. Single electron transistors (SETs) have active regions consisting of one or more quantum islands with a size typically 10 nanometers or less. Integrating bacteriorhodopsin with the gate of a SET provides a device capable of a modulated electrical output in response to optical modulation at the device gate. Modulation of the optoelectric activity of the bR by chemical binding with a targeted environmental antigen can form a direct chemical-to-electrical sensor reducing the size and complexity of fluorescence-based systems. The work resulted in electrical resistance and capacitance characterization of purple membrane containing bR under variable illumination to ensure minimal impact on SET operation. Purple membrane containing bacteriorhodopsin was electrodeposited on the SET gates, and current throughput was well correlated with variable and cyclic illumination. It was confirmed that bR optoelectric activity is capable of driving SETs.Karl A. Walczak, Paul L. Bergstrom, and Craig R. FriedrichCopyright © 2011 Karl A. Walczak et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/192818/An analog template matching pattern classifier circuit based on a new synthesis of Euclidean distance calculation is presented. It is composed of simple two-quadrant squarer/divider blocks. The circuit employs MOSFETs that operate in strong inverted saturation region performing electronically simulated translinear loop. The converter features very low supply voltage (0.9 V), immune from body effect, two-quadrant input current, large dynamic range, and low circuit complexity. The circuit was successfully applied to the recognition of some simple patterns. Simulation results by HSPICE show high performance in the separation of circuit and confirm the validity of the proposed technique.Ebrahim FarshidiCopyright © 2011 Ebrahim Farshidi. All rights reserved.http://www.hindawi.com/journals/apec/2011/131546/A systematic synthesis procedure for generating second-order grounded passive element canonic oscillators is given. The synthesis procedure is based on using nodal admittance matrix (NAM) expansion with the bracket method as well as using the infinity parameters. The resulting derived oscillators include circuits using various types of current conveyors. Two classes of oscillators are considered in this paper, and they have the advantages of having independent control on the condition of oscillation and on the frequency of oscillation by varying two different grounded resistors. The two classes of oscillators considered can be easily compensated for the parasitic element effects introduced by the current conveyors. This paper is considered to be continuation to the recently published paper on oscillators using NAM expansion D. G. Haigh et al. (2006). This is the first paper in the literature which uses limit-variables called infinity-variables D. G. Haigh et al. (2005) in the synthesis of oscillator circuits. Simulation results demonstrating the practicality of some of the generated circuits are included.Ahmed M. SolimanCopyright © 2011 Ahmed M. Soliman. All rights reserved.http://www.hindawi.com/journals/apec/2011/101432/A new active circuit is proposed for the realisation of lossless grounded and floating inductance employing Voltage Differencing Differential Input Buffered Amplifiers (VD-DIBAs). The proposed grounded simulated inductance circuit employs two VD-DIBAs and a single-grounded capacitor whereas the floating simulated inductance circuit employs three VD-DIBAs and a grounded capacitor. The circuit for grounded inductance does not require any realization conditions whereas in case of floating inductance, only equality of two transconductances is needed. Some sample results demonstrating the applications of the new simulated inductors using VD-DIBAs have been given to confirm the workability of the new circuits.Dinesh Prasad, D. R. Bhaskar, and K. L. PushkarCopyright © 2011 Dinesh Prasad et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/439052/This paper proposes a multi-input single-output (MISO) second-order active-C voltage mode (VM) universal filter using two second-generation current-controlled current conveyors (CCCIIs) and two equal-valued capacitors. The proposed circuit realizes low pass, band pass, high pass, all pass, and notch responses from the same topology. The filter uses-minimum number of passive components and no resistor which is suitable for IC Design. The filter enjoys low-sensitivity performance and exhibits electronic and orthogonal tunability of pole frequency (ω0) and quality factor (Q0) via bias current of CCCIIs. PSPICE simulation results confirm the theory.Ashish Ranjan and Sajal K. PaulCopyright © 2011 Ashish Ranjan and Sajal K. Paul. All rights reserved.http://www.hindawi.com/journals/apec/2011/108423/The goal of this research was to test the effects of seacoast atmosphere on tantalum capacitors. Four tests were chosen for this purpose: the 85/85 test was chosen for testing the effects of the combination of high humidity and high temperature, salt spray testing was done for examining the effects of high humidity and salt, temperature cycling test was applied for testing the effects of temperature changes, and a 100% RH humidity test was developed for examining the effects of very high humidity. The results show that combination of high humidity and high temperature did not possess a significant risk for these capacitors during their normal use. Very high humidity and radical temperature changes both affected the breakdown voltages of tantalum capacitors. Salt fog caused corrosion of these components and had a small effect on breakdown voltage but did not have an effect on capacitance or ESR.Johanna Virkki and Pasi RaumonenCopyright © 2011 Johanna Virkki and Pasi Raumonen. All rights reserved.http://www.hindawi.com/journals/apec/2011/919240/A comb-line filter with a coupling capacitor in the ground plane is proposed. The filter consists of two quarter-wavelength microstrip resonators. A coupling capacitor is inserted into the ground plane in order to build strong coupling locally along the resonators. The filtering characteristics are investigated through numerical simulations as well as experiments. Filtering characteristics that have attenuation poles at both sides of the passband are obtained. The input susceptances of even and odd modes and coupling coefficients are discussed. The filters using stepped impedance resonators (SIRs) are also discussed, and the effects of the coupling capacitor for an SIR structure are shown.Toshiaki KitamuraCopyright © 2011 Toshiaki Kitamura. All rights reserved.http://www.hindawi.com/journals/apec/2011/929507/A universal voltage-mode filter (VM) and a current-mode filter (CM) based on recently proposed active building block, namely, differential voltage current conveyor transconductance amplifier (DVCCTA) are proposed. Both the circuits use a single DVCCTA, two capacitors, and a single resistor. The filters enjoy low-sensitivity performance and low component spread and exhibit electronic tunability of filter parameters via bias currents of DVCCTA. SPICE simulation using 0.25 μm TSMC CMOS technology parameters is included to show the workability of the proposed circuits.Neeta Pandey and Sajal K. PaulCopyright © 2011 Neeta Pandey and Sajal K. Paul. All rights reserved.http://www.hindawi.com/journals/apec/2011/830182/A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.Nikhil M. Kriplani, Stephen Bowyer, Jennifer Huckaby, and Michael B. SteerCopyright © 2011 Nikhil M. Kriplani et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/895247/The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potential VDE(T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.Agnes Nagy, Alicia Polanco, and Manuel AlvarezCopyright © 2011 Agnes Nagy et al. All rights reserved.http://www.hindawi.com/journals/apec/2010/542572/This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve the fT values at high injection levels.Pierre-Marie Mans, Sebastien Jouan, Sebastien Fregonese, Benoit Vandelle, Denis Pache, Caroline Arnaud, Cristell Maneux, and Thomas ZimmerCopyright © 2010 Pierre-Marie Mans et al. All rights reserved.http://www.hindawi.com/journals/apec/2011/684954/We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous N(N−1)/2 tracking relations among N transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among N transistors.Ning LuCopyright © 2011 Ning Lu. All rights reserved.http://www.hindawi.com/journals/apec/2010/591640/The potential utilization of RF signals for DC power is experimentally investigated. The aim of the work is to investigate the levels of power that can be harvested from the air and processed to achieve levels of energy that are sufficient to charge up low-power electronic circuits. The work presented shows field measurements from two selected regions: an urbanized hence signal congested area and a less populated one. An RF harvesting system has been specifically designed, built, and shown to successfully pick up enough energy to power up circuits. The work concludes that while RF harvesting was successful under certain conditions, however, it required the support of other energy harvesting techniques to replace a battery. Efficiency considerations have, hence, placed emphasis on comparing the developed harvester to other systems.Soudeh Heydari Nasab, Mohammad Asefi, Lutfi Albasha, and Naser QaddoumiCopyright © 2010 Soudeh Heydari Nasab et al. All rights reserved.http://www.hindawi.com/journals/apec/2010/542406/This paper investigates the transition frequencies (ftrans) of an inductively terminated CMOS source follower buffer for negative resistance behavior at which the effective shunt resistance looking into the source of the buffer cell changes sign. Possible limiting frequencies of oscillation are determined based on resonators formed by a grounded gate inductor and a parasitic capacitance at the gate of the negative resistance buffer cell. The range of frequencies of oscillation of this negative resistance buffer cell for variations in the different circuit parameters/elements is explored. Following this, a millimeter wave (MMW) oscillator is simulated using the IBM 130 nm CMOS process technology which can operate at 70 GHz. High-frequency MOSFET model was used for these simulations. The cell had an extremely low power dissipation of under 3 mW. Extensive Monte Carlo simulations were carried out for manufacturability analysis considering up to 50% variation in process and geometrical parameters, supply voltage, and ambient temperature. Noise analysis and a simulated estimate of the phase noise in an MMW LC VCO application is also reported.S. M. Rezaul HasanCopyright © 2010 S. M. Rezaul Hasan. All rights reserved.http://www.hindawi.com/journals/apec/2010/268431/We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration calculated from Taylor polynomials of inverse functions. The solution is presented analytically wherever possible, and the integration is made from simple numerical methods (Simpson, Romberg) or adaptative algorithms and can be implemented in simple C-program or in usual mathematical software. The transconductance and the diffusion current are also calculated with the same model.Hugues Murray, Patrick Martin, and Serge BardyCopyright © 2010 Hugues Murray et al. All rights reserved.http://www.hindawi.com/journals/apec/2010/362516/This paper introduces a novel voltage-mode multifunction biquadratic filter with single input and four outputs using two plus-type differential difference current conveyors (DDCCs) and four grounded passive components. The filter can realize inverting highpass, inverting bandpass, noninverting lowpass, and noninverting bandpass filter responses, simultaneously. It still maintains the following advantages: (i) using grounded capacitors attractive for integration and absorbing shunt parasitic capacitance, (ii) using grounded resistors at all X terminals of DDCCs suitable for the variations of filter parameters and absorbing series parasitic resistances at all X terminals of DDCCs, (iii) high-input impedance good for cascadability, (iv) no need to change the filter topology, (v) no need to component-matching conditions, (vi) low active and passive sensitivity performances, and (vii) simpler configuration due to the use of plus-type DDCCs only. HSPICE and MATLAB simulations results are provided to demonstrate the theoretical analysis.Hua-Pin ChenCopyright © 2010 Hua-Pin Chen. All rights reserved.http://www.hindawi.com/journals/apec/2010/702759/The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrow-band LNA designs, in this paper the finite gds  (=1/r0) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum Fmin noise matching at a very low power drain of 850 μW from a 0.7 V supply voltage. The LNA was fabricated using the IBM 130 nm CMOS process delivering a forward power gain (S21) of ≈12 dB, a reverse isolation (S12) of ≈−34 dB, an output power reflection (S22 @866 MHz) of ≈−25 dB, and an input power reflection (S11 @866 MHz) of ≈−12 dB. It had a minimum pass-band NF of around 2.2 dB and a third-order input referred intercept point (IIP3) of ≈−11.5 dBm.Jie Li and S. M. Rezaul HasanCopyright © 2010 Jie Li and S. M. Rezaul Hasan. All rights reserved.http://www.hindawi.com/journals/apec/2010/785631/One configuration for realizing voltage-mode multifunction filters and another configuration for realizing current-mode multifunction filters each using two current-feedback amplifiers (CFAs) are presented. The proposed voltage-mode circuit exhibits simultaneously lowpass, bandpass, and highpass filters. The proposed current-mode circuit also exhibits simultaneously lowpass, bandpass, and highpass filters. The proposed circuits offer the following features: no requirements for component matching conditions, low active and passive sensitivities, employing only grounded capacitors, and the ability to obtain multi-function filters from the same circuit configuration.Jiun Wei Horng, Pei-Young Chou, and Jian-Yu WuCopyright © 2010 Jiun Wei Horng et al. All rights reserved.http://www.hindawi.com/journals/apec/2009/835789/A new dual-input differential input active integrator using a current differencing buffered amplifier (CDBA) is proposed. A multiplier element is appropriately used in the circuit whose control voltage (Vc) tunes the integrator time constant (τ) electronically. The design of a voltage controlled quadrature oscillator (VCQO) based on the proposed integrator had been satisfactorily implemented. A new type of measurement for the tuning error of the oscillator based on the Nyquist plot is presented that shows an error of only 2% at fo≈ 1 MHz with Total Harmonic Distortion (THD) less than 3%.R. Nandi, Mousiki Kar, and Sagarika DasCopyright © 2009 R. Nandi et al. All rights reserved.http://www.hindawi.com/journals/apec/2009/789171/This paper describes a current-mode third-order quadrature oscillator based on current differencing transconductance amplifiers (CDTAs). Outputs of two current-mode sinusoids with 90° phase difference are available in the quadrature oscillator circuit. The oscillation condition and oscillation frequency are orthogonal controllable. The proposed circuit employs only grounded capacitors and is ideal for integration. Simulation results are included to confirm the theoretical analysis.Jiun-Wei HorngCopyright © 2009 Jiun-Wei Horng. All rights reserved.