Metal-Insulator-Semiconductor Field-Effect Transistors

Call for Papers

In the last few decades, there has been a tremendous progress in metal-insulator-semiconductor field-effect transistors (MISFETs) and their applications. Among the various materials, Ge, III-V, and III-N semiconductors have attracted considerable attention for MISFETs fabrication. These devices are used in a large number of different circuits such as power amplifiers, low-noise amplifiers, mixers, frequency converters, and phase shifters. Also, the high-k materials are now playing an important role in the future high-mobility-channel devices for improving the required performance.

We invite authors to contribute original research as well as review articles on the recent progress in all kinds of MISFETs and their applications. Potential topics include, but are not limited to:

• High-k dielectrics on Ge, III-V, and III-N MISFETs
• Novel methods or concepts for Ge, III-V, and III-N MISFETs
• Characterization of high-k dielectric/high-mobility-channel material interfaces (including physical, chemical, and electronic properties)
• Electronic or optoelectronic applications for Ge, III-V, and III-N MISFETs
• Status of related material/process development (e.g., 3D MISFETs, III-V growth on Si, or others)
• Simulation or modeling of MISFETs

Before submission authors should carefully read over the journal's Author Guidelines, which are located at http://www.hindawi.com/journals/apec/guidelines/. Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/ according to the following timetable:

Lead Guest Editor

• Kuan-Wei Lee, Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan

Guest Editors

• Edward Yi Chang, Department of Electronic Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
• Yeong-Her Wang, Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
• Pei-Wen Li, Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan
• Yasuyuki Miyamoto, Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan