Volume 12 [30 articles]

• Effect of V₂O₅ Dopant on the Electrical Conductivity of RuO₂ Thick Film Resistors, M. S. Setty and R. F. Shinde
  Volume 12 (1986), Issue 2, Pages 111-117
• Preparation and Properties of a New Thick Film System, T. Inokuma, Yoshiaki Taketa, and Miyoshi Haradome
  Volume 12 (1986), Issue 2, Pages 119-126
• Microstructural Studies of Ni-P Thick Film Resistor Temperature Sensors, Barbara Holodnik, Abram Jakubowicz, Marian Lukaszewicz, and Wolfgang Hauffe
  Volume 12 (1986), Issue 2, Pages 127-135
• Thick Film Resistors on Dielectrics as Temperature Detectors, Benedykt Rzasa and Jerzy Potencki
  Volume 12 (1986), Issue 2, Pages 137-147
• About the Influence of SiO₂ on the Temperature Behaviour of Ruthenate Based Thick Film Resistors, I. Storbeck and M. Wolf
  Volume 12 (1987), Issue 3, Pages 149-153
• Control of Electrical Properties of RuO₂ Thick Film Resistors, Toshio Inokuma and Yoshiaki Taketa
  Volume 12 (1987), Issue 3, Pages 155-166
• Thermal and Electrical Analysis of Solid Aluminium Capacitors, E. H.L.J. Dekker and C. J.M. Lasance
  Volume 12 (1987), Issue 3, Pages 167-186
• A Thick-Film Segmented-Resistor Structure for High Trimfactors, P. K. Khanna and S. K. Bhatnagar
  Volume 12 (1987), Issue 3, Pages 187-190
• High Temperature Oxidized SnO₂ Films Prepared by Reactive Sputtering, G. Beensh-Marchwicka, L. Król-Stępniewska, and A. Misiuk
  Volume 12 (1987), Issue 3, Pages 191-200
• A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour, A. J. Franklin, E. A. Amerasekera, and D. S. Campbell
  Volume 12 (1987), Issue 3, Pages 201-211