Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

Figure 1

The ReRAM on/off switch is first formed in the media films after a virgin voltage bias. The thin filaments rupture in the reset process and the current is hard to flow between TE (top electrode) and BE (bottom electrode), and the ReRAM shows HRS (high resistance state) characteristics. The thin filaments reconduct under the electric field in the set process. The current is easily flowing through TE and BE, and the ReRAM exhibits LRS (low resistance state). (a) No filament exists in the initial state. (b) Filament is formed by ion mobility.

(a)

(b)