Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

<table class="figure-group"><tr class="fig-image" id="a"><td><object data="https://static.hindawi.com/articles/ddns/volume-2015/586842/figures/586842.fig.002a.svgz" name="586842.fig.002a" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(a) </b>Initial state</td></tr><tr class="fig-image" id="b"><td><object data="https://static.hindawi.com/articles/ddns/volume-2015/586842/figures/586842.fig.002b.svgz" name="586842.fig.002b" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(b) </b>Set state</td></tr></table>

<div>Ion mobility and conduction formation process of the ReRAM device. (a) Initial state, data from ReRAM_00_log.str. (b) Set state, data from ReRAM_01_log.str. The conduction path is formed by applying a lower and longer pulse to obtain a low resistance.</div>

Discrete Dynamics in Nature and Society

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Figure 2: Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM 