Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer

<div>Total reflectance spectrum of textured samples for different etching times at <svg height="11.8174pt" id="M50" style="vertical-align:-3.1815pt" version="1.1" viewbox="-0.0498162 -8.6359 54.3489 11.8174" width="54.3489pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z" id="g113-68"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="668" vert-adv-y="668" xpluscharwidth="8.684"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.619,3.132)"><path d="M308 0V33C225 38 217 44 217 128V521C217 605 225 612 308 617V650H39V617C122 612 130 605 130 521V128C130 44 122 38 39 33V0H308Z" id="g58-71"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="348" vert-adv-y="348" xpluscharwidth="11.78578956"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,11.786,3.132)"><path d="M46 650V618C122 613 130 611 130 522V128C130 46 123 40 40 32V0H319V32C227 40 217 42 217 128V279L292 260C303 259 322 258 338 261C436 272 534 337 534 467C534 534 508 580 469 609C428 640 371 650 299 650H46ZM217 558C217 585 220 596 228 603C235 610 256 615 284 615C367 615 435 571 435 463C435 339 358 304 291 304C256 304 229 310 217 317V558Z" id="g58-78"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="573" vert-adv-y="573" xpluscharwidth="17.00028281"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,16.214,3.132)"><path d="M682 0V33C615 38 603 49 571 134C507 305 441 494 378 665L343 655L136 136C101 48 86 41 22 33V0H246V33C170 41 161 50 183 112C196 152 209 192 224 232H441C461 176 478 126 493 87C504 49 499 41 433 33V0H682ZM425 279H242C273 363 303 448 335 533H337L425 279Z" id="g58-63"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="703" vert-adv-y="703" xpluscharwidth="22.61127891"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,26.797,0)"><path d="M535 323V373H52V323H535ZM535 138V188H52V138H535Z" id="g117-34"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="587" vert-adv-y="587" xpluscharwidth="34.428"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,38.06,0)"><path d="M456 178V225H360V632H320C217 496 115 347 20 206V178H280V106C280 40 276 34 189 27V0H445V27C364 34 360 39 360 106V178H456ZM280 225H82C149 335 214 431 278 520H280V225Z" id="g113-53"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="480" vert-adv-y="480" xpluscharwidth="44.300000000000004"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,44.3,0)"><path d="M594 629L561 652L159 -9L190 -32L594 629ZM194 635C92 635 49 534 49 453C49 374 92 272 193 272C295 272 338 374 338 454S295 635 194 635ZM193 605C257 605 265 504 265 453C265 405 257 302 194 302C133 302 122 403 122 454S133 605 193 605ZM567 351C465 351 421 250 421 169C421 90 465 -12 566 -12S710 90 710 170S667 351 567 351ZM566 322C628 322 637 221 637 169C637 121 628 18 567 18S494 119 494 170C494 223 506 322 566 322Z" id="g121-35"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="756" vert-adv-y="756" xpluscharwidth="54.128"></glyph.data></g></svg> vol. The inset figure presents the AFM images for Si wafers’ surface.</div>

International Journal of Analytical Chemistry

fig9

Figure 9

Figure 9: Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer 

Figure 9 | Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer 