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International Journal of Antennas and Propagation
Volume 2013 (2013), Article ID 738659, 3 pages
Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics
1Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, China
2Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Received 17 March 2013; Accepted 25 April 2013
Academic Editor: Haiwen Liu
Copyright © 2013 Liwei Jin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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