| | References | Technology | Protocol | Frequency | Tx power | Rx sensitivity | Power consumption | Area |
| | [10] | 0.18 μm SiGe BiCMOS | Gen2 | 860–960 MHz | +27 dBm | −85 dBm | 1.2 W | 21 mm2 | | [18] | 0.18 μm CMOS | Gen2 | 860–960 MHz | +10 dBm | −85 dBm | 540 mW | 36 mm2 | | [23] | 0.18 μm CMOS | Gen2 | 900 MHz | +4 dBm | −70 dBm | 160.2 mW | 23.85 mm2 | | This work | 0.18 μm CMOS | Gen2 | 860–960 MHz | +27 dBm | −90 dBm | 1.08 W | 26 mm2 |
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