Research Article
Detailed Theoretical Model for Adjustable Gain-Clamped Semiconductor Optical Amplifier
Table 1
Device parameters used in AGC-SOA simulation.
| Symbol | Parameters | SOA1 | SOA2 |
| | Central active region length | 400 μm | 840 μm | | Tapered active region length | 200 μm | 160 μm | | Active region thickness | 0.4 μm | 0.1 μm | | Active region width | 0.4 μm | 1.1 μm | | Molar fraction of arsenide | 0.892 | 0.816 | | Confinement factor | 0.15 | 0.15 | | Input facet reflectivity | | | | Output facet reflectivity | | | | Input coupling loss | 3 dB | 2 dB | | Output coupling loss | 3 dB | 2 dB | | Carrier-independent absorption loss coefficient | 6200 | 3000 | | Carrier-dependent absorption loss coefficient | | | | Active region refractive index | 3.22 | 3.56 | | Recombination coefficients | | | /s | | /s | | WDM coupler pass band insertion loss | 0.5 dB |
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