Table 1: Device parameters used in AGC-SOA simulation.

SymbolParametersSOA1SOA2

Central active region length400 μm840 μm
Tapered active region length200 μm160 μm
Active region thickness0.4 μm0.1 μm
Active region width0.4 μm1.1 μm
Molar fraction of arsenide0.8920.816
Confinement factor0.150.15
Input facet reflectivity
Output facet reflectivity
Input coupling loss3 dB2 dB
Output coupling loss3 dB2 dB
Carrier-independent absorption loss coefficient6200  3000 
Carrier-dependent absorption loss coefficient
Active region refractive index3.223.56
Recombination coefficients
/s
/s
WDM coupler pass band insertion loss0.5 dB