Photoelectrochemical Characterization of Sprayed 𝛼-Fe₂O₃ Thin Films: Influence of Si Doping and SnO₂ Interfacial Layer

Figure 1

(a) XRD of Fe₂O₃ films doped with 0.1% Si deposited at (a) 350^°C, (b) 400^°C, (c) 450^°C. The diffraction pattern of the TCO substrate fired at 400^°C in the air is also shown for comparison. Undefined peaks are marked with ^*. (b) Raman spectra of Fe₂O₃ samples doped with 0.2% Si deposited at (a) 350^°C, (b) 450^°C, (c) 500^°C. (c) SEM micrographs showing the typical morphology of the Fe₂O₃ films on TCO. (d) Cross-section of a 200 nm Fe₂O₃ film on a fused silica substrate.

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