Photoelectrochemical Characterization of Sprayed 𝛼-Fe₂O₃ Thin Films: Influence of Si Doping and SnO₂ Interfacial Layer

Figure 2

(a) Current-potential measurements under simulated 80 mW/cm² AM1.5 sunlight for Fe₂O₃ doped with 0.2% Si with (a: front-side illumination; a’: back-side illumination; d: dark) and without (b: front-side illumination; b’: back-side illumination; c: dark) 5 nm SnO₂ interfacial layer. The scan rate is 𝛼mV/s. (b) Dependence of the photocurrent (front-side illumination) at 0.23 V versus Ag/AgCl on the Si dopant concentration; a: with SnO₂ interfacial layer; b: without SnO₂ interfacial layer.

(a)

(b)