Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications
Figure 1
(a) SEM image of GaN nanowires grown with catalyst on substrate. The wires have random orientation with diameters from 50 to 500 nm, and lengths on the order of 10 to 20 . (b) XRD of the GaN nanowires indicates that it has the wurtzite crystal structure. The peaks shown correspond to the , , and planes from left to right. (c) TEM phase contrast image of a single GaN nanowire oriented along the zone axis. The wires length extends along the direction. The inset shows the electron diffraction pattern, indicating that the wires are single crystalline. (d) SEM showing vertically aligned GaN nanowires on tilted . The inset shows the triangular cross-section of the nanowires from the top-down view.
