Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts
Figure 4
Thickness variation of ribbon-type Si wafers depending on the moving velocity of substrates (pulling speed) at the range of 315–926 cm/min at the constant substrate temperature of 1000°C, time interval of 2.5 sec, and blowing rate of Ar gas of 0.8 Nm3/h.
