Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts
Figure 5
Thickness variation of ribbon-type Si wafers depending on the blowing rate of Ar gas at the range of 0.5–1.1 Nm3/h at the constant substrate temperature of 1000°C, time interval of 2.5 sec, and moving velocity of substrates of 485 cm/min.
