Crystal Growth Behaviors of Silicon during Melt Growth Processes

Figure 17

Schematic images of growth of Si ⟨112⟩ dendrite [73, 74]. (a) Equilibrium form of a crystal with two twins, which is bounded by {111} habit planes. It is considered that the crystal grows only in the ⟨112⟩ direction for simplicity. A reentrant corner of 141° angle (type I) appears at the growth surface only at twin₁. (b) A triangular corner is formed owing to the rapid growth at the type I corner at twin₁. (c) Crystal growth can continue on the {111} flat surface although the rapid growth is inhibited because of the disappearance of the type I corner. When the triangular crystal propagates across twin₂, two new type I corners are formed at twin_2. (d) Rapid growth occurs at the two type I corners again, and a triangular corner is formed. (e) After the propagation of the crystal, a type I corner is formed at twin₁. (f) Rapid growth occurs at a type I corner. A faceted dendrite continues to grow along the ⟨112⟩ direction by repeating the process from (b) to (f). The tip of the ⟨112⟩ dendrite becomes wider with crystal growth.

(a)

(b)

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(e)

(f)