Review Article

Crystal Growth Behaviors of Silicon during Melt Growth Processes

Figure 19

(a) Growth process of three dendrites (d1, d2, and d3) grown from same crystal-melt interface at same time [75]. (b) Parallel twins observed at center of d1, d2, and d3 by EBSP measurement. The average twin spacings in d1, d2, and d3 are 4.5 μm, 10 μm, and 16.5 μm, respectively [75]. (c) Dendrite growth velocity as function of twin spacing [75].
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