Review Article

Crystal Growth Behaviors of Silicon during Melt Growth Processes

Figure 5

Calculated thermal fields of Si crystal and melt during crystallization for 𝑉 = 50, 123, 147, 200, and 250 μm/s. 𝜌 𝑐 𝐶 P c = 2 . 2 9 × 1 0 3  J/mm3 K, 𝜌 𝑚 𝐶 P m = 2 . 5 3 × 1 0 3  J/mm3 K, 𝑘 𝑐 = 2 . 2 × 1 0 2  W/mm K, 𝑘 𝑚 = 5 . 4 × 1 0 2  W/mm K,   𝑘 𝑞 = 4 . 3 × 1 0 3  W/mm K, 𝑙 𝑞 = 1.0 mm, 𝑙 S i = 0.5 mm, 𝐺 = 8 K/mm, Δ 𝐻 = 4 . 1 2 2  J/mm3, and 𝑇 m p = 1683 K. 𝑙 𝑞 , 𝑙 S i , and 𝐺 are based on the experimental values, and the physical properties of Si used are based on those mentioned in [37]. The temperature gradient in the Si melt at the crystal-melt interface changed from positive to negative as 𝑉 increased [10].
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