Crystal Growth Behaviors of Silicon during Melt Growth Processes
Figure 5
Calculated thermal fields of Si crystal and melt during crystallization for = 50, 123, 147, 200, and 250 μm/s. J/mm3 K, J/mm3 K, W/mm K, W/mm K, W/mm K, = 1.0 mm, = 0.5 mm, = 8 K/mm, J/mm3, and = 1683 K. , , and are based on the experimental values, and the physical properties of Si used are based on those mentioned in [37]. The temperature gradient in the Si melt at the crystal-melt interface changed from positive to negative as increased [10].