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International Journal of Photoenergy
Volume 2012 (2012), Article ID 206174, 5 pages
http://dx.doi.org/10.1155/2012/206174
Research Article

Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells

1Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan
2Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
3Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan
4Department of Electronic Engineering, Chang-Gung University, Taoyuan 333, Taiwan

Received 29 March 2012; Revised 18 June 2012; Accepted 26 June 2012

Academic Editor: Wayne A. Anderson

Copyright © 2012 Ming-Hsien Wu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Ming-Hsien Wu, Sheng-Po Chang, Shoou-Jinn Chang, Ray-Hua Horng, Wen-Yih Liao, and Ray-Ming Lin, “Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells,” International Journal of Photoenergy, vol. 2012, Article ID 206174, 5 pages, 2012. doi:10.1155/2012/206174