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International Journal of Photoenergy
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International Journal of Photoenergy
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2012
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Article
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Fig 3
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Research Article
Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
Figure 3
Cross-sectional TEM images of GaN/InGaN interface of (a) 10%, (b) 12%, and (c) 14% In composition.
(a)
(b)
(c)