Table 2: Photovoltaic properties of GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10%, 12%, and 14% under experimental measurement and theoretical simulation.

GaN/InGaN PV cellsIn = 10%In = 12%In = 14%
SimulationExperimentSimulationExperimentSimulationExperiment

(V)2.662.072.591.832.551.57
(mA/cm2)0.720.310.830.420.940.46
FF (%)94.5480.1694.4369.0994.3541
η (%)1.800.512.040.532.270.3