Table 2:
Photovoltaic properties of GaN/InGaN double-heterostructure photovoltaic cells with In compositions of 10%, 12%, and 14% under experimental measurement and theoretical simulation.
GaN/InGaN PV cells
In = 10%
In = 12%
In = 14%
Simulation
Experiment
Simulation
Experiment
Simulation
Experiment
(V)
2.66
2.07
2.59
1.83
2.55
1.57
(mA/cm
2
)
0.72
0.31
0.83
0.42
0.94
0.46
FF (%)
94.54
80.16
94.43
69.09
94.35
41
η
(%)
1.80
0.51
2.04
0.53
2.27
0.3