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International Journal of Photoenergy
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International Journal of Photoenergy
/
2012
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Article
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Tab 3
/
Research Article
Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
Table 3
The series and shunt resistance of fabricated GaN/InGaN photovoltaic cells with In composition of 10%, 12%, and 14%.
GaN/InGaN PV cells
In = 10%
In = 12%
In = 14%
(Ω-cm
2
)
234.84
416.81
725.45
(Ω-cm
2
)
121.66
3
103.08
3
17.38
3