Raman Amplifier Based on Amorphous Silicon Nanoparticles

Figure 1

(a) Cross-sectional TEM bright-field micrograph of Si-rich nitride/amorphous-Si superlattice structure consisting of 10 SRN layers and 9 a-Si layers for a total thickness of 450 nm. (b) Higher magnification of a SRN layer, showing amorphous Si nanocrystals (approximately 2 nm in diameter) marked by arrows.