The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells

<table>The diode factor <i>n</i> versus emitter layer thickness obtained from dark-current density versus voltage (DIV) with a-Si : H(p)/c-Si(n) solar cells shown in Figure <a href="../fig4/">4</a>. The inset shows DIV for a-Si : H(p)/c-Si(n) solar cells having different emitter layer thickness.</table>

International Journal of Photoenergy

fig5

Figure 5

Figure 5: The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells 