The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells

Table 1

Best-fit parameters extracted from the dielectric function modeling using the Tauc-Lorentz model. The results were obtained from the a-Si : H(p) thin films deposited at different gas phase doping concentrations.

𝑋𝑔	𝑑𝑠 (nm)	𝑑𝑏 (nm)	𝑑SiO (nm)	A	𝐸0 (eV)	C	𝐸𝑔 (eV)
2%	1.978	7.082	0.052	80.88	3.97	1.69	1.62
3%	1.377	6.980	0.002	83.67	3.91	1.75	1.62
5%	0.909	7.071	0.154	93.96	3.84	1.82	1.59
10%	1.880	6.992	0.032	95.75	3.83	1.97	1.60