- About this Journal
- Abstracting and Indexing
- Aims and Scope
- Annual Issues
- Article Processing Charges
- Articles in Press
- Author Guidelines
- Bibliographic Information
- Citations to this Journal
- Contact Information
- Editorial Board
- Editorial Workflow
- Free eTOC Alerts
- Publication Ethics
- Reviewers Acknowledgment
- Submit a Manuscript
- Subscription Information
- Table of Contents
International Journal of Photoenergy
Volume 2012 (2012), Article ID 357218, 5 pages
doi:10.1155/2012/357218
Investigation of the Relationship between Reverse Current of Crystalline Silicon Solar Cells and Conduction of Bypass Diode
Institute of Solar Energy MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Department of Physics, Xi’an Jiaotong University, Xi’an 710049, China
Received 9 December 2011; Accepted 31 January 2012
Academic Editor: Bhushan Sopori
Copyright © 2012 Hong Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
In the process of crystalline silicon solar cells production, there exist some solar cells whose reverse current is larger than 1.0 A because of silicon materials and process. If such solar cells are encapsulated into solar modules, hot-spot phenomenon will emerge in use. In this paper, the effect of reverse current on reliability of crystalline silicon solar modules was investigated. Based on the experiments, considering the different shaded rate of cells, the relation between reverse current of crystalline silicon solar cells and conduction of bypass diode was investigated for the first time. To avoid formation of hot spots and failure of solar modules, the reverse current should be smaller than 1.0 A for 125 mm × 125 mm monocrystalline silicon solar cells when the bias voltage is at −12 V.