Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer

Table 1

Experimental procedure of the ALILE process.

Deposition condition	Annealing conditions	Removed condition
(i) Aluminum layer: 300 nm using DC sputter	(i) Equipment: tube furnace	⊳ Al layer:
(ii) Al oxide layer: 4~16 nm using RF sputter	(ii) Flow gas: N2, 20 sccm	Diluted nitric acid, 70°C, 3 min
(iii) a-Si layer: 300 nm using RF-PECVD	(iii) Pressure: atmosphere	⊳ Si layer:
(iv) Substrate: eagle 2000, 0.7 mm	(iv) Annealing: 400°C, 5 hours	(i) Amplitude: 60%
	(v) Sample size: 5 × 5 cm	(ii) Force: holder only (400 g)
		(iii) 15 min