Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer

Table 2

Electrical properties of pc-Si films produced by AIC process for various Al oxide layer thicknesses.

Sample	Resistivity [Ω·cm]	Carrier density [cm^−3]	Hall mobility [cm^2/Vs]
Native oxide	8.2 × 10^−2	8.7 × 10^17	87.62
4 nm	6.1 × 10^−2	1.2 × 10^18	83.54
8 nm	6.1 × 10^−2	1.1 × 10^18	90.91
12 nm	5.7 × 10^−2	1.3 × 10^18	85.12
16 nm	6.2 × 10^−2	1.5 × 10^18	68.78
20 nm	3.1 × 10^−1	1.6 × 10^18	14.14