Optimised In2S3 Thin Films Deposited by Spray Pyrolysis
Figure 3
Deposition substrate temperature dependence of the relative intensity of the phonon mode with respect to the background at 200 cm−1 of the Raman spectra In2S3 films as deposited (full squares) and after postdeposition annealing treatments. One hour annealing at 400°C in furnace (full triangles); one hour annealing at 500°C in furnace (full circles); one minute rapid thermal annealing at 500°C (open squares); two minutes rapid thermal annealing at 500°C (open squares); one minute rapid thermal annealing at 500°C followed by one hour annealing at 500°C in furnace (open triangles).
