Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD
Figure 2
(a) XRD patterns of the Si thin films. The films were prepared at a substrate temperature of R.T. for 10 (1), 30 , 60 , 180 , and 360 min , respectively. The arrow indicates the presence of (111) Si peaks in each spectrum. (b) Crystal size and relative peak intensity ratio (relative peak intensity ratio = (Intensitypeak1, 2, 3, 4, 5/Intensitypeak 5) × 100%) versus film thickness.
