Table 1: Various deposition conditions of the nc-Si:H thin films.

SystemDeposition parameterExperimental conditions

PECVDSiH4 flow rate (sccm)4
H2 flow rate (sccm)96
SubstrateSi wafer, glass
RF power (watt)150
Deposition time (min)10, 30, 60, 180, 360
Working pressure (Torr)
Background pressure (Torr)