High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process

Figure 3

SEMs of pyramids topology: (a) 1400x and (b) 3000x process without backside rounding process. (c) 1400x and (d) 3000x process with backside rounding of ED3. (e) 1400x and (f) 3000x process with backside rounding of ED6. (g) 1400x and (h) 3000x process with backside rounding of ED9.

(a)

(b)

(c)

(d)

(e)

(f)

(g)

(h)