High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process

Table 2

𝑅_sheet results of different etching depths after annealing.

𝑅sheet [ohm/sq]	Max	Average	Min	Uniformity (%)
ED0	66.58	64.7	63.2	2.61%
ED3	67.31	65.3	63.6	2.84%
ED6	66.78	64.9	63.4	2.60%
ED9	66.77	65.1	63.23	2.72%