High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process

Table 3

Comparison of SiO₂ thickness and uniformity of different etching depths.

	ED0	ED3	ED6	ED9
SiO2 thickness (nm)	16.54	16.49	16.56	16.61
Uniformity (%)	0.79%	0.82%	0.73%	0.67%