High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process

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<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M627 18l-10 -26q-79 6 -116 27t-69 76q-41 71 -71 138q-13 29 -27.5 39t-42.5 10h-46l-27 -145q-13 -74 -2.5 -88.5t78.5 -20.5l-6 -28h-271l5 28q66 6 82.5 21.5t30.5 87.5l71 387q12 66 2 78.5t-77 19.5l8 28h233q102 0 147 -29q65 -43 65 -129q0 -69 -45.5 -117
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<g transform="matrix(.012,-0,0,-.012,11.013,15.187)"><path d="M689 332q0 -81 -40 -161.5t-103.5 -131.5t-127.5 -51q-32 0 -58.5 16t-40.5 46q-70 -62 -139 -62q-45 0 -77.5 30t-32.5 86q0 8 7 52q11 77 45 187q6 19 6 34q0 6 -7 6q-24 0 -78 -64l-20 23q32 48 73 77t78 29q32 0 32 -43q0 -30 -12 -73q-27 -95 -38 -152
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</svg>% comparison of different etching depths after ARC deposition.

International Journal of Photoenergy

tab4

Table 4

Table 4: High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process 