Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

<table>The measured capacitance (<svg height="15.5375" id="M98" style="vertical-align:-3.276pt" version="1.1" viewbox="0 0 18.4375 15.5375" width="18.4375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.4)"><use xlink:href="#x1D436"></use></g>
<g transform="matrix(.012,-0,0,-.012,12.05,15.475)"><use xlink:href="#x31"></use></g>
</svg>) as a function of bias voltage in the p-i-n structure.</table>

International Journal of Photoenergy

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Figure 9

Figure 9: Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer 