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International Journal of Photoenergy
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International Journal of Photoenergy
/
2012
/
Article
/
Fig 2
/
Research Article
Current Mechanism in
H
f
O
2
-Gated Metal-Oxide-Semiconductor Devices
Figure 2
Characteristics of
J-V
plots for Al/HfO
2
/p-Si (MOS) structure at various temperatures.