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International Journal of Photoenergy
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International Journal of Photoenergy
/
2012
/
Article
/
Fig 8
/
Research Article
Current Mechanism in
H
f
O
2
-Gated Metal-Oxide-Semiconductor Devices
Figure 8
The temperature-dependent curves of the (a)
C-V
and (b)
G/
ω
-V
characteristics of Al/HfO
2
/p-Si (MOS) structure as measured at 1 MHz.
(a)
(b)