Current Mechanism in HfO₂-Gated Metal-Oxide-Semiconductor Devices

Table 2

Temperature-dependent values of various parameters obtained from the J-V characteristics of the Al/HfO₂/p-Si structure.

T (K)	Gate injection			Substrate injection
	𝜙𝑏(eV)	n	𝜀𝑟	𝜙𝑏(eV)	n	𝜀𝑟
100	0.482	1.71	2.92	0.342	1.66	2.75
120	0.522	1.72	2.96	0.387	1.67	2.79
140	0.561	1.72	2.97	0.431	1.68	2.83
160	0.602	1.73	3.01	0.474	1.70	2.88
180	0.641	1.76	3.09	0.516	1.71	2.92
200	0.683	1.77	3.13	0.556	1.72	2.97
220	0.725	1.79	3.19	0.591	1.74	3.03
240	0.763	1.80	3.24	0.627	1.76	3.10
260	0.807	1.81	3.27	0.666	1.77	3.15
280	0.850	1.82	3.32	0.703	1.79	3.22
300	0.895	1.84	3.38	0.739	1.81	3.29
320	0.936	1.85	3.41	0.778	1.83	3.36