Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Table 1

The deposition conditions of SiGe films.

Parameter	Value
Power (W)	15
Pressure (Pa)	40
Electrode distance (mm)	14
Substrate temperature (°C)	200
SiH4 flow rate (sccm)	40; 40; 40; 30; 10; 0
GeH4 flow rate (sccm)	0; 10; 30; 40; 40; 40
Gas ratio (%)	0–100