Research Article

Simulation of Nonpolar p-GaN/i- N/n-GaN Solar Cells

Figure 1

(a) The efficiency and short circuit current ( ) as well as (b) open circuit voltage ( ) and fill factor of InxGa1−x N pn junction solar cells, respectively, with an In composition from (  eV) to (  eV) under AM1.5 illumination. The inset shows the structure of InxGa1−x N pn junction solar cells.
910256.fig.001a
(a)
910256.fig.001b
(b)