Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

<table>Recombination rate and electric field distribution of The a-SiGe:H solar cell device for different acceptor concentrations in p-layer.</table>

International Journal of Photoenergy

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Figure 4

Figure 4: Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect 

Figure 4 | Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect 