Research Article
Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect
Table 1
The set of input parameters used in the simulation.
| Layer | p-layer | i-layer | n-layer |
| Thickness [nm] | 50 | 800 | 50 | Doping concentration [/cm3] | | | | Mobility gap [eV] | 1.8 | 1.5 | 1.8 | Electron mobility [cm2/Vs] | 10 | 20 | 20 | Hole mobility [cm2/Vs] | 1 | 2 | 2 | Effective DOS in CB [/cm3] | | | | Effective DOS in VB [/cm3] | | | |
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