Fabrication of a Cu(InGa)Se<sub><b>2</b></sub> Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

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</svg>) ratio of 0.95 deposited on a Mo-coated SLG substrate.</table>

International Journal of Photoenergy

fig8

Figure 8

Figure 8: Fabrication of a Cu(InGa)Se<sub><b>2</b></sub> Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer 

International Journal of Photoenergy

Fabrication of a Cu(InGa)Se2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

Figure 8

Fabrication of a Cu(InGa)Se₂ Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer