Fabrication of a Cu(InGa)Se₂ Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

Table 1

Elemental composition of the as-deposited precursors and CIGS films.

Sample	Precursor layer					CIGS layer
	Compositions (at %)			Ratios		Compositions (at %)				Ratios
	Cu	In	Ga	Cu/(In + Ga)	Ga/(In + Ga)	Cu	In	Ga	Se	Cu/(In + Ga)	Ga/(In + Ga)
A	42.94	44.96	12.10	0.753	0.212	22.78	21.96	6.88	48.38	0.790	0.239
B	48.49	37.04	13.83	0.953	0.272	24.26	18.46	7.07	50.3	0.950	0.277
C	53.52	31.55	14.93	1.151	0.321	26.89	14.38	7.71	47.62	1.217	0.349