Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers

Figure 3

Calculated interstitial Fe concentration averaged throughout the Si wafer after the gettering process with different temperatures and times. The initial concentration of the interstitial iron atoms was assumed to be 1 × 10¹² atoms/cm³. For higher temperatures than 750°C, the interstitial Fe concentration increased with time, which might be originated from the increase of iron atoms migrated from the precipitate sites at higher temperature.