The Effect of Bandgap Graded Absorber on the Performance of a-Si_1–xGe_x:H Single-Junction Cells with μc-SiO_x:H N-Type Layer

Figure 2

The schematic band structure of a-Si_1−xGe_x:H single-junction cell (a) without bandgap grading and (b) with bandgap grading at both the p/i and the i/n interfaces.

(a)

(b)