The Effect of Bandgap Graded Absorber on the Performance of a-Si1–xGex:H Single-Junction Cells with μc-SiOx:H N-Type Layer
Figure 6
The performance of a-Si1−xGex:H single-junction cells as a function of the i/n grading width under illumination of AM1.5G light source. The p/i grading width and the total thickness of absorber were 15 and 230 nm, respectively, for all the cells. The lines were drawn to guide the eye.
