Double Ion Implantation and Pulsed Laser Melting  Processes for Third Generation Solar Cells

<table>Hall mobility as a function of temperature measured for the single implanted and the double implanted samples. A Si reference substrate is used for comparison purposes.</table>

International Journal of Photoenergy

fig5

Figure 5

Figure 5: Double Ion Implantation and Pulsed Laser Melting  Processes for Third Generation Solar Cells 