Single-Crystalline Silicon Solar Cell with Selective Emitter Formed by Screen Printing and Chemical Etching Method: A Feasibility Study

Table 3

Electrical parameters and conversion efficiencies measured, in a different set of experiments, for a reference cell (Ref.), and back-surface a-Si:H deposited cells annealed at 285°C (a-Si/285°C) and 400°C (a-Si/400°C). All of these cells have a homogeneous emitter.

	𝐽sc (mA/cm^2)	𝑉oc (mV)	F.F. (%)	𝜂 (%)
Ref.	36.84	625	78.56	18.09
a-Si/285°C	36.7	629.9	79.5	18.38
a-Si/400°C	36.79	630.1	79.51	18.43